A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel

A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel

A backside-illuminated complementary metal-oxide-semiconductor (CMOS) image sensor with 4.0 μm voltage domain global shutter (GS) pixels has been fabricated in a 45 nm/65 nm stacked CMOS process as a proof-of-concept vehicle. The pixel components for the photon-to-voltage conversion are for...

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Bibliographic Details
Main Authors: Ken Miyauchi, Kazuya Mori, Toshinori Otaka, Toshiyuki Isozaki, Naoto Yasuda, Alex Tsai, Yusuke Sawai, Hideki Owada, Isao Takayanagi, Junichi Nakamura
Format: Article
Language:English
Published: MDPI AG 2020-01-01
Series:Sensors
Subjects:
cmos image sensor
voltage domain global shutter
stacked sensor
back side illumination
high dynamic range
single exposure
multiple gain readout
high full well capacity
low noise
multiple exposure
Online Access:https://www.mdpi.com/1424-8220/20/2/486

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https://www.mdpi.com/1424-8220/20/2/486

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