3D trigonal FAPbI3‐based multilevel resistive switching nonvolatile memory for artificial neural synapse

3D trigonal FAPbI3‐based multilevel resistive switching nonvolatile memory for artificial neural synapse

Abstract Hybrid perovskites have attracted enormous attention in the next generation resistive switching (RS) memristor for the artificial synapses, owing to their ambipolar charge transport, long diffusion length, and tunable visible bandgap. However, the variable switch, limited reproducibility, a...

पूर्ण विवरण

ग्रंथसूची विवरण
मुख्य लेखकों: Li Tao, Bowen Jiang, Sijie Ma, Yan Zhang, Yuanqiang Huang, Yueyi Pan, Weijun Kong, Jun Zhang, Guokun Ma, Houzhao Wan, Yong Ding, Paul J. Dyson, Mohammad Khaja Nazeeruddin, Hao Wang
स्वरूप: लेख
भाषा:English
प्रकाशित: Wiley 2024-06-01
श्रृंखला:SmartMat
विषय:
3D trigonal HC(NH2)2PbI3
artificial synapses
hybrid perovskite
image recognition
low power consumption
memristor
ऑनलाइन पहुंच:https://doi.org/10.1002/smm2.1233

इंटरनेट

https://doi.org/10.1002/smm2.1233

समान संसाधन