Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

Vertical GaN-on-GaN Schottky barrier diodes based on as-grown and regrown samples were fabricated to investigate the effects of the etch-then-regrow process on device performance. The surface roughness increased slightly after dry etching and decreased after regrowth. According to X-ray diffraction...

Full description

Bibliographic Details
Main Authors: Kai Fu, Houqiang Fu, Xuanqi Huang, Tsung-Han Yang, Chi-Yin Cheng, Prudhvi Ram Peri, Hong Chen, Jossue Montes, Chen Yang, Jingan Zhou, Xuguang Deng, Xin Qi, David J. Smith, Stephen M. Goodnick, Yuji Zhao
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Schottky barrier diodes
GaN-on-GaN
regrow
leakage
interface
Online Access:https://ieeexplore.ieee.org/document/8949530/

Internet

https://ieeexplore.ieee.org/document/8949530/

Similar Items