High-frequency Si/SiGe phototransistor model: Operation on multiple polarization points

This article presents the results of our research on the modeling of an HPT SiGe heterojunction phototransistor. Usually this HPTs type work for a single point of polarization in this work, we were interested in modeling the same HPT on different points of polarization. We will model the HPT to oper...

Full description

Bibliographic Details
Main Authors: Diop A.M., Bennour A., Mazer S, El Bekkali M., Fattah M., Polleux J-L., Algani C.
Format: Article
Language:English
Published: EDP Sciences 2022-01-01
Series:E3S Web of Conferences
Subjects:
Online Access:https://www.e3s-conferences.org/articles/e3sconf/pdf/2022/18/e3sconf_icies2022_01058.pdf