High-frequency Si/SiGe phototransistor model: Operation on multiple polarization points
This article presents the results of our research on the modeling of an HPT SiGe heterojunction phototransistor. Usually this HPTs type work for a single point of polarization in this work, we were interested in modeling the same HPT on different points of polarization. We will model the HPT to oper...
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Language: | English |
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EDP Sciences
2022-01-01
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Series: | E3S Web of Conferences |
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Online Access: | https://www.e3s-conferences.org/articles/e3sconf/pdf/2022/18/e3sconf_icies2022_01058.pdf |
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author | Diop A.M. Bennour A. Mazer S El Bekkali M. Fattah M. Polleux J-L. Algani C. |
author_facet | Diop A.M. Bennour A. Mazer S El Bekkali M. Fattah M. Polleux J-L. Algani C. |
author_sort | Diop A.M. |
collection | DOAJ |
description | This article presents the results of our research on the modeling of an HPT SiGe heterojunction phototransistor. Usually this HPTs type work for a single point of polarization in this work, we were interested in modeling the same HPT on different points of polarization. We will model the HPT to operate at both 2V and 3V, so that we can use the HPT at multiple bias points and reduce costs and allow the reuse of the HPT SiG heterojunction phototransistor on further studies. For a defined point of polarization we will optimize the operation of the HPT so that it flies with the dynamic measurements and we will not base on this HPT by modifying certain values and components so that the HTP works on the other points of polarization. |
first_indexed | 2024-04-12T11:04:10Z |
format | Article |
id | doaj.art-1db683fea223439282861262c1478639 |
institution | Directory Open Access Journal |
issn | 2267-1242 |
language | English |
last_indexed | 2024-04-12T11:04:10Z |
publishDate | 2022-01-01 |
publisher | EDP Sciences |
record_format | Article |
series | E3S Web of Conferences |
spelling | doaj.art-1db683fea223439282861262c14786392022-12-22T03:35:50ZengEDP SciencesE3S Web of Conferences2267-12422022-01-013510105810.1051/e3sconf/202235101058e3sconf_icies2022_01058High-frequency Si/SiGe phototransistor model: Operation on multiple polarization pointsDiop A.M.0Bennour A.1Mazer S2El Bekkali M.3Fattah M.4Polleux J-L.5Algani C.6IASSE Laboratory, University Sidi Mohamed Ben Abdellah FèsIMAGE Laboratory, Moulay Ismail1University MeknesUniversity Paris-Est, ESYCOM (EA 2552), ESIEE, UPEM, Le Cnam, Noisy-le-GrandLe Cnam, ESYCOM (EA2552)IMAGE Laboratory, Moulay Ismail1University MeknesUniversity Paris-Est, ESYCOM (EA 2552), ESIEE, UPEM, Le Cnam, Noisy-le-GrandLe Cnam, ESYCOM (EA2552)This article presents the results of our research on the modeling of an HPT SiGe heterojunction phototransistor. Usually this HPTs type work for a single point of polarization in this work, we were interested in modeling the same HPT on different points of polarization. We will model the HPT to operate at both 2V and 3V, so that we can use the HPT at multiple bias points and reduce costs and allow the reuse of the HPT SiG heterojunction phototransistor on further studies. For a defined point of polarization we will optimize the operation of the HPT so that it flies with the dynamic measurements and we will not base on this HPT by modifying certain values and components so that the HTP works on the other points of polarization.https://www.e3s-conferences.org/articles/e3sconf/pdf/2022/18/e3sconf_icies2022_01058.pdfhpt heterojunction phototransistorrof radio-over-fiber |
spellingShingle | Diop A.M. Bennour A. Mazer S El Bekkali M. Fattah M. Polleux J-L. Algani C. High-frequency Si/SiGe phototransistor model: Operation on multiple polarization points E3S Web of Conferences hpt heterojunction phototransistor rof radio-over-fiber |
title | High-frequency Si/SiGe phototransistor model: Operation on multiple polarization points |
title_full | High-frequency Si/SiGe phototransistor model: Operation on multiple polarization points |
title_fullStr | High-frequency Si/SiGe phototransistor model: Operation on multiple polarization points |
title_full_unstemmed | High-frequency Si/SiGe phototransistor model: Operation on multiple polarization points |
title_short | High-frequency Si/SiGe phototransistor model: Operation on multiple polarization points |
title_sort | high frequency si sige phototransistor model operation on multiple polarization points |
topic | hpt heterojunction phototransistor rof radio-over-fiber |
url | https://www.e3s-conferences.org/articles/e3sconf/pdf/2022/18/e3sconf_icies2022_01058.pdf |
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