A 1.6 kV Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10<sup>−5</sup> A/cm<sup>2</sup> Enabled by Field Plates and N Ion-Implantation Edge Termination

A 1.6 kV Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10<sup>−5</sup> A/cm<sup>2</sup> Enabled by Field Plates and N Ion-Implantation Edge Termination

In this work, by employing field plate (FP) and N ion-implantation edge termination (NIET) structure, the electrical performance of the <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diode (SBD) was greatly improved. Ten samples of vertical SBDs were fabric...

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Bibliographic Details
Main Authors: Xinlong Zhou, Jining Yang, Hao Zhang, Yinchi Liu, Genran Xie, Wenjun Liu
Format: Article
Language:English
Published: MDPI AG 2024-06-01
Series:Nanomaterials
Subjects:
<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>
Schottky barrier diode
field plate
N ion implantation
breakdown voltage
Online Access:https://www.mdpi.com/2079-4991/14/11/978

Internet

https://www.mdpi.com/2079-4991/14/11/978

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