Optical Pump–Terahertz Probe Study of HR GaAs:Cr and SI GaAs:EL2 Structures with Long Charge Carrier Lifetimes

Optical Pump–Terahertz Probe Study of HR GaAs:Cr and SI GaAs:EL2 Structures with Long Charge Carrier Lifetimes

The time dynamics of nonequilibrium charge carrier relaxation processes in SI GaAs:EL2 (semi-insulating gallium arsenide compensated with EL2 centers) and HR GaAs:Cr (high-resistive gallium arsenide compensated with chromium) were studied by the optical pump–terahertz probe technique. Charge carrier...

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Bibliographic Details
Main Authors: Irina A. Kolesnikova, Daniil A. Kobtsev, Ruslan A. Redkin, Vladimir I. Voevodin, Anton V. Tyazhev, Oleg P. Tolbanov, Yury S. Sarkisov, Sergey Yu. Sarkisov, Victor V. Atuchin
Format: Article
Language:English
Published: MDPI AG 2021-12-01
Series:Photonics
Subjects:
SI GaAs:Cr
HR GaAs:Cr
optical pump–terahertz probe
charge carrier lifetime
Shockley–Read–Hall recombination
Auger recombination
Online Access:https://www.mdpi.com/2304-6732/8/12/575

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https://www.mdpi.com/2304-6732/8/12/575

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