Configurable NbOx Memristors as Artificial Synapses or Neurons Achieved by Regulating the Forming Compliance Current for the Spiking Neural Network

Configurable NbOx Memristors as Artificial Synapses or Neurons Achieved by Regulating the Forming Compliance Current for the Spiking Neural Network

Abstract For the first time, a configurable NbOx memristor is achieved that can be configured as an artificial synapse or neuron after fabrication by controlling the forming compliance current (FCC). When the FCC ≤ 2 mA, the memristors exhibit the resistive‐switching (RS) property, enabling multiple...

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Bibliographic Details
Main Authors: Chuan Yu Han, Sheng Li Fang, Yi Lin Cui, Weihua Liu, Shi Quan Fan, Xiao Dong Huang, Xin Li, Xiao Li Wang, Guo He Zhang, Wing Man Tang, P. T. Lai, Jia Liu, Xianjie Wan, Zhou Yu, Li Geng
Format: Article
Language:English
Published: Wiley-VCH 2023-06-01
Series:Advanced Electronic Materials
Subjects:
artificial neurons
artificial synapses
forming compliance current
NbO x memristors
spiking neural networks
Online Access:https://doi.org/10.1002/aelm.202300018

Internet

https://doi.org/10.1002/aelm.202300018

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