Toward Ultra-Low Efficiency Droop in C-Plane Polar InGaN Light-Emitting Diodes by Reducing Carrier Density with a Wide InGaN Last Quantum Well

Toward Ultra-Low Efficiency Droop in C-Plane Polar InGaN Light-Emitting Diodes by Reducing Carrier Density with a Wide InGaN Last Quantum Well

We demonstrate an ultra-low efficiency droop in c-plane polar InGaN blue light-emitting diodes (LEDs) by reducing the carrier density using a wide InGaN last quantum well (LQW). It is found that the LEDs with a 5.2 nm thick LQW show a negligible efficiency droop, with an external quantum efficiency...

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Bibliographic Details
Main Authors: Yongbing Zhao, Panpan Li
Format: Article
Language:English
Published: MDPI AG 2019-07-01
Series:Applied Sciences
Subjects:
InGaN
light-emitting diodes
efficiency droop
carrier recombination
carrier localization
Online Access:https://www.mdpi.com/2076-3417/9/15/3004

Internet

https://www.mdpi.com/2076-3417/9/15/3004

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