Progress to a Gallium-Arsenide Deep-Center Laser
Although photoluminescence from gallium-arsenide (GaAs) deep-centers was first observed in the 1960s, semiconductor lasers have always utilized conduction-to-valence-band transitions. Here we review recent materials studies leading to the first GaAs deep-center laser. First, we summarize well-known...
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Format: | Article |
Language: | English |
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MDPI AG
2009-10-01
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Series: | Materials |
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Online Access: | http://www.mdpi.com/1996-1944/2/4/1599/ |