Dry etching of ternary metal carbide TiAlC via surface modification using floating wire-assisted vapor plasma

Dry etching of ternary metal carbide TiAlC via surface modification using floating wire-assisted vapor plasma

Abstract Dry etching of ternary metal carbides TiAlC has been first developed by transferring from wet etching to dry etching using a floating wire (FW)-assisted Ar/ammonium hydroxide vapor plasma. FW-assisted non-halogen vapor plasma generated at medium pressure can produce high-density reactive ra...

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Bibliographic Details
Main Authors: Thi-Thuy-Nga Nguyen, Kazunori Shinoda, Hirotaka Hamamura, Kenji Maeda, Kenetsu Yokogawa, Masaru Izawa, Kenji Ishikawa, Masaru Hori
Format: Article
Language:English
Published: Nature Portfolio 2022-11-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-022-24949-1

Internet

https://doi.org/10.1038/s41598-022-24949-1

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