Near-field infrared nanoscopic study of EUV- and e-beam-exposed hydrogen silsesquioxane photoresist
Abstract This article presents a technique of scattering-type scanning near-field optical microscopy (s-SNOM) based on scanning probe microscopy as a nanoscale-resolution chemical visualization technique of the structural changes in photoresist thin films. Chemical investigations were conducted in t...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2022-12-01
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| Series: | Nano Convergence |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s40580-022-00345-3 |
| _version_ | 1828293731573301248 |
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| author | Jiho Kim Jin-Kyun Lee Boknam Chae Jinho Ahn Sangsul Lee |
| author_facet | Jiho Kim Jin-Kyun Lee Boknam Chae Jinho Ahn Sangsul Lee |
| author_sort | Jiho Kim |
| collection | DOAJ |
| description | Abstract This article presents a technique of scattering-type scanning near-field optical microscopy (s-SNOM) based on scanning probe microscopy as a nanoscale-resolution chemical visualization technique of the structural changes in photoresist thin films. Chemical investigations were conducted in the nanometer regime by highly concentrated near-field infrared on the sharp apex of the metal-coated atomic force microscopy (AFM) tip. When s-SNOM was applied along with Fourier transform infrared spectroscopy to characterize the extreme UV- and electron-beam (e-beam)-exposed hydrogen silsesquioxane films, line and space patterns of half-pitch 100, 200, 300, and 500 nm could be successfully visualized prior to pattern development in the chemical solutions. The linewidth and line edge roughness values of the exposed domains obtained by s-SNOM were comparable to those extracted from the AFM and scanning electron microscopy images after development. The chemical analysis capabilities provided by s-SNOM provide new analytical opportunities that are not possible with traditional e-beam-based photoresist measurement, thus allowing information to be obtained without interference from non-photoreaction processes such as wet development. |
| first_indexed | 2024-04-13T11:26:08Z |
| format | Article |
| id | doaj.art-1eaa32e2edfb4e94872750a71e7f1a6a |
| institution | Directory Open Access Journal |
| issn | 2196-5404 |
| language | English |
| last_indexed | 2024-04-13T11:26:08Z |
| publishDate | 2022-12-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nano Convergence |
| spelling | doaj.art-1eaa32e2edfb4e94872750a71e7f1a6a2022-12-22T02:48:42ZengSpringerOpenNano Convergence2196-54042022-12-019111010.1186/s40580-022-00345-3Near-field infrared nanoscopic study of EUV- and e-beam-exposed hydrogen silsesquioxane photoresistJiho Kim0Jin-Kyun Lee1Boknam Chae2Jinho Ahn3Sangsul Lee4Pohang Accelerator Laboratory, POSTECHDepartment of Polymer Science and Engineering, Inha UniversityPohang Accelerator Laboratory, POSTECHDivision of Materials Science and Engineering, Hanyang UniversityPohang Accelerator Laboratory, POSTECHAbstract This article presents a technique of scattering-type scanning near-field optical microscopy (s-SNOM) based on scanning probe microscopy as a nanoscale-resolution chemical visualization technique of the structural changes in photoresist thin films. Chemical investigations were conducted in the nanometer regime by highly concentrated near-field infrared on the sharp apex of the metal-coated atomic force microscopy (AFM) tip. When s-SNOM was applied along with Fourier transform infrared spectroscopy to characterize the extreme UV- and electron-beam (e-beam)-exposed hydrogen silsesquioxane films, line and space patterns of half-pitch 100, 200, 300, and 500 nm could be successfully visualized prior to pattern development in the chemical solutions. The linewidth and line edge roughness values of the exposed domains obtained by s-SNOM were comparable to those extracted from the AFM and scanning electron microscopy images after development. The chemical analysis capabilities provided by s-SNOM provide new analytical opportunities that are not possible with traditional e-beam-based photoresist measurement, thus allowing information to be obtained without interference from non-photoreaction processes such as wet development.https://doi.org/10.1186/s40580-022-00345-3Nanoscale chemical visualizationHydrogen silsesquioxane (HSQ)Infrared nanoscopyScattering-type scanning near-field optical microscope (s-SNOM)PhotoreactionPhotoresist |
| spellingShingle | Jiho Kim Jin-Kyun Lee Boknam Chae Jinho Ahn Sangsul Lee Near-field infrared nanoscopic study of EUV- and e-beam-exposed hydrogen silsesquioxane photoresist Nano Convergence Nanoscale chemical visualization Hydrogen silsesquioxane (HSQ) Infrared nanoscopy Scattering-type scanning near-field optical microscope (s-SNOM) Photoreaction Photoresist |
| title | Near-field infrared nanoscopic study of EUV- and e-beam-exposed hydrogen silsesquioxane photoresist |
| title_full | Near-field infrared nanoscopic study of EUV- and e-beam-exposed hydrogen silsesquioxane photoresist |
| title_fullStr | Near-field infrared nanoscopic study of EUV- and e-beam-exposed hydrogen silsesquioxane photoresist |
| title_full_unstemmed | Near-field infrared nanoscopic study of EUV- and e-beam-exposed hydrogen silsesquioxane photoresist |
| title_short | Near-field infrared nanoscopic study of EUV- and e-beam-exposed hydrogen silsesquioxane photoresist |
| title_sort | near field infrared nanoscopic study of euv and e beam exposed hydrogen silsesquioxane photoresist |
| topic | Nanoscale chemical visualization Hydrogen silsesquioxane (HSQ) Infrared nanoscopy Scattering-type scanning near-field optical microscope (s-SNOM) Photoreaction Photoresist |
| url | https://doi.org/10.1186/s40580-022-00345-3 |
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