Direct Observation for Distinct Behaviors of Gamma‐Ray Irradiation‐Induced Subgap Density‐of‐States in Amorphous InGaZnO TFTs by Multiple‐Wavelength Light Source

Direct Observation for Distinct Behaviors of Gamma‐Ray Irradiation‐Induced Subgap Density‐of‐States in Amorphous InGaZnO TFTs by Multiple‐Wavelength Light Source

Abstract The amorphous In─Ga─Zn─O (a‐IGZO) thin film transistors (TFTs) have attracted attention as a cell transistor for the next generation DRAM architecture because of its low leakage current, high mobility, and the back‐end‐of‐line (BEOL) compatibility that enables monolithic 3D (M3D) integratio...

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Bibliographic Details
Main Authors: Jaewook Yoo, Hyeun Seung Jo, Seung‐Bae Jeon, Taehwan Moon, Hongseung Lee, Seongbin Lim, Hyeonjun Song, Binhyeong Lee, Soon Joo Yoon, Soyeon Kim, Minah Park, Seohyeon Park, Jo Hak Jeong, Keun Heo, Yoon Kyeung Lee, Peide D. Ye, TaeWan Kim, Hagyoul Bae
Format: Article
Language:English
Published: Wiley-VCH 2024-08-01
Series:Advanced Electronic Materials
Subjects:
amorphous oxide semiconductor
gamma‐ray irradiation
indium gallium zinc oxide
multiple‐wavelength light source
subgap density‐of‐states
Online Access:https://doi.org/10.1002/aelm.202300906

Internet

https://doi.org/10.1002/aelm.202300906

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