Ferroelectric HfO<sub>2</sub> Tunnel Junction Memory With High TER and Multi-Level Operation Featuring Metal Replacement Process
We have investigated device design of HfO<sub>2</sub>-based ferroelectric tunnel junction (FTJ) memory. Asymmetry of dielectric screening property in top and bottom electrodes is the key for high tunneling electroresistance (TER) ratio. Thus, metal and semiconductor electrodes are propos...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8573140/ |