Growth and Characterization of GaN/In<i><sub>x</sub></i>Ga<sub>1−<i>x</i></sub>N/In<i><sub>y</sub></i>Al<sub>1−<i>y</i></sub>N Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy

Growth and Characterization of GaN/In<i><sub>x</sub></i>Ga<sub>1−<i>x</i></sub>N/In<i><sub>y</sub></i>Al<sub>1−<i>y</i></sub>N Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy

The nearly lattice-matched In<i><sub>x</sub></i>Ga<sub>1−<i>x</i></sub>N/In<i><sub>y</sub></i>Al<sub>1−<i>y</i></sub>N epi-layers were grown on a GaN template by plasma-assisted molecular beam epitaxy wit...

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Bibliographic Details
Main Authors: Huei-Jyun Shih, Ikai Lo, Ying-Chieh Wang, Cheng-Da Tsai, Yu-Chung Lin, Yi-Ying Lu, Hui-Chun Huang
Format: Article
Language:English
Published: MDPI AG 2022-03-01
Series:Crystals
Subjects:
InAlN
InGaN
III-nitrides
decomposition
quantum well
incorporation
Online Access:https://www.mdpi.com/2073-4352/12/3/417

Internet

https://www.mdpi.com/2073-4352/12/3/417

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