Ferroelectric Switching in Trilayer Al<sub>2</sub>O<sub>3</sub>/HfZrO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> Structure

Ferroelectric Switching in Trilayer Al<sub>2</sub>O<sub>3</sub>/HfZrO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> Structure

Since ferroelectricity has been observed in simple binary oxide material systems, it has attracted great interest in semiconductor research fields such as advanced logic transistors, non-volatile memories, and neuromorphic devices. The location in which the ferroelectric devices are implemented depe...

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Bibliographic Details
Main Authors: Solyee Im, Seung-Youl Kang, Yeriaron Kim, Jeong Hun Kim, Jong-Pil Im, Sung-Min Yoon, Seung Eon Moon, Jiyong Woo
Format: Article
Language:English
Published: MDPI AG 2020-09-01
Series:Micromachines
Subjects:
ferroelectric switching
HfZrO<sub>x</sub>
trilayer structure
Online Access:https://www.mdpi.com/2072-666X/11/10/910

Internet

https://www.mdpi.com/2072-666X/11/10/910

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