Ferroelectric Switching in Trilayer Al<sub>2</sub>O<sub>3</sub>/HfZrO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> Structure
Since ferroelectricity has been observed in simple binary oxide material systems, it has attracted great interest in semiconductor research fields such as advanced logic transistors, non-volatile memories, and neuromorphic devices. The location in which the ferroelectric devices are implemented depe...
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MDPI AG
2020-09-01
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| author | Solyee Im Seung-Youl Kang Yeriaron Kim Jeong Hun Kim Jong-Pil Im Sung-Min Yoon Seung Eon Moon Jiyong Woo |
| author_facet | Solyee Im Seung-Youl Kang Yeriaron Kim Jeong Hun Kim Jong-Pil Im Sung-Min Yoon Seung Eon Moon Jiyong Woo |
| author_sort | Solyee Im |
| collection | DOAJ |
| description | Since ferroelectricity has been observed in simple binary oxide material systems, it has attracted great interest in semiconductor research fields such as advanced logic transistors, non-volatile memories, and neuromorphic devices. The location in which the ferroelectric devices are implemented depends on the specific application, so the process constraints required for device fabrication may be different. In this study, we investigate the ferroelectric characteristics of Zr doped HfO<sub>2</sub> layers treated at high temperatures. A single HfZrO<sub>x</sub> layer deposited by sputtering exhibits polarization switching after annealing at a temperature of 850 °C. However, the achieved ferroelectric properties are vulnerable to voltage stress and higher annealing temperature, resulting in switching instability. Therefore, we introduce an ultrathin 1-nm-thick Al<sub>2</sub>O<sub>3</sub> layer at both interfaces of the HfZrO<sub>x</sub>. The trilayer Al<sub>2</sub>O<sub>3</sub>/HfZrO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> structure allows switching parameters such as remnant and saturation polarizations to be immune to sweeping voltage and pulse cycling. Our results reveal that the trilayer not only makes the ferroelectric phase involved in the switching free from pinning, but also preserves the phase even at high annealing temperature. Simultaneously, the ferroelectric switching can be improved by preventing leakage charge. |
| first_indexed | 2024-03-10T15:55:35Z |
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| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T15:55:35Z |
| publishDate | 2020-09-01 |
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| series | Micromachines |
| spelling | doaj.art-1f095b79cad947a4b333de91717183a02023-11-20T15:39:09ZengMDPI AGMicromachines2072-666X2020-09-01111091010.3390/mi11100910Ferroelectric Switching in Trilayer Al<sub>2</sub>O<sub>3</sub>/HfZrO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> StructureSolyee Im0Seung-Youl Kang1Yeriaron Kim2Jeong Hun Kim3Jong-Pil Im4Sung-Min Yoon5Seung Eon Moon6Jiyong Woo7ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 34129, KoreaICT Creative Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 34129, KoreaICT Creative Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 34129, KoreaICT Creative Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 34129, KoreaICT Creative Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 34129, KoreaDepartment of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi 17104, KoreaICT Creative Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 34129, KoreaICT Creative Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 34129, KoreaSince ferroelectricity has been observed in simple binary oxide material systems, it has attracted great interest in semiconductor research fields such as advanced logic transistors, non-volatile memories, and neuromorphic devices. The location in which the ferroelectric devices are implemented depends on the specific application, so the process constraints required for device fabrication may be different. In this study, we investigate the ferroelectric characteristics of Zr doped HfO<sub>2</sub> layers treated at high temperatures. A single HfZrO<sub>x</sub> layer deposited by sputtering exhibits polarization switching after annealing at a temperature of 850 °C. However, the achieved ferroelectric properties are vulnerable to voltage stress and higher annealing temperature, resulting in switching instability. Therefore, we introduce an ultrathin 1-nm-thick Al<sub>2</sub>O<sub>3</sub> layer at both interfaces of the HfZrO<sub>x</sub>. The trilayer Al<sub>2</sub>O<sub>3</sub>/HfZrO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> structure allows switching parameters such as remnant and saturation polarizations to be immune to sweeping voltage and pulse cycling. Our results reveal that the trilayer not only makes the ferroelectric phase involved in the switching free from pinning, but also preserves the phase even at high annealing temperature. Simultaneously, the ferroelectric switching can be improved by preventing leakage charge.https://www.mdpi.com/2072-666X/11/10/910ferroelectric switchingHfZrO<sub>x</sub>trilayer structure |
| spellingShingle | Solyee Im Seung-Youl Kang Yeriaron Kim Jeong Hun Kim Jong-Pil Im Sung-Min Yoon Seung Eon Moon Jiyong Woo Ferroelectric Switching in Trilayer Al<sub>2</sub>O<sub>3</sub>/HfZrO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> Structure Micromachines ferroelectric switching HfZrO<sub>x</sub> trilayer structure |
| title | Ferroelectric Switching in Trilayer Al<sub>2</sub>O<sub>3</sub>/HfZrO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> Structure |
| title_full | Ferroelectric Switching in Trilayer Al<sub>2</sub>O<sub>3</sub>/HfZrO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> Structure |
| title_fullStr | Ferroelectric Switching in Trilayer Al<sub>2</sub>O<sub>3</sub>/HfZrO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> Structure |
| title_full_unstemmed | Ferroelectric Switching in Trilayer Al<sub>2</sub>O<sub>3</sub>/HfZrO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> Structure |
| title_short | Ferroelectric Switching in Trilayer Al<sub>2</sub>O<sub>3</sub>/HfZrO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> Structure |
| title_sort | ferroelectric switching in trilayer al sub 2 sub o sub 3 sub hfzro sub x sub al sub 2 sub o sub 3 sub structure |
| topic | ferroelectric switching HfZrO<sub>x</sub> trilayer structure |
| url | https://www.mdpi.com/2072-666X/11/10/910 |
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