Contactless doping characterization of $${\mathrm{Ga}_{2}\mathrm{O}_{3}}$$ Ga 2 O 3 using acceptor Cd probes

Contactless doping characterization of $${\mathrm{Ga}_{2}\mathrm{O}_{3}}$$ Ga 2 O 3 using acceptor Cd probes

Abstract Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor $$\beta$$ β - $${\mathrm{Ga}_{2}\mathrm{O}_{3}}$$ Ga 2 O 3 could strongly influence and contribute to the development of the next generation of power electron...

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Bibliographic Details
Main Authors: Marcelo B. Barbosa, João Guilherme Correia, Katharina Lorenz, Armandina M. L. Lopes, Gonçalo N. P. Oliveira, Abel S. Fenta, Juliana Schell, Ricardo Teixeira, Emilio Nogales, Bianchi Méndez, Alessandro Stroppa, João Pedro Araújo
Format: Article
Language:English
Published: Nature Portfolio 2022-08-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-022-18121-y

Internet

https://doi.org/10.1038/s41598-022-18121-y

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