An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources

An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources

In this paper, a technique to develop small signal circuit (SSC) models of AlGaN/GaN high electron mobility transistors (HEMTs) using dependent current sources is presented. In this technique, experimentally measured broadband Y-parameters of AlGaN/GaN HEMTs are mathematically modeled as a sum of po...

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Bibliographic Details
Main Authors: Aakash Jadhav, Takashi Ozawa, Ali Baratov, Joel T. Asubar, Masaaki Kuzuhara, Akio Wakejima, Shunpei Yamashita, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Sourajeet Roy, Biplab Sarkar
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
HEMT
small signal circuit
vector fit
rational functions
Y-parameters
Online Access:https://ieeexplore.ieee.org/document/9896132/

Internet

https://ieeexplore.ieee.org/document/9896132/

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