An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources
In this paper, a technique to develop small signal circuit (SSC) models of AlGaN/GaN high electron mobility transistors (HEMTs) using dependent current sources is presented. In this technique, experimentally measured broadband Y-parameters of AlGaN/GaN HEMTs are mathematically modeled as a sum of po...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2022-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9896132/ |
| _version_ | 1811255023550595072 |
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| author | Aakash Jadhav Takashi Ozawa Ali Baratov Joel T. Asubar Masaaki Kuzuhara Akio Wakejima Shunpei Yamashita Manato Deki Shugo Nitta Yoshio Honda Hiroshi Amano Sourajeet Roy Biplab Sarkar |
| author_facet | Aakash Jadhav Takashi Ozawa Ali Baratov Joel T. Asubar Masaaki Kuzuhara Akio Wakejima Shunpei Yamashita Manato Deki Shugo Nitta Yoshio Honda Hiroshi Amano Sourajeet Roy Biplab Sarkar |
| author_sort | Aakash Jadhav |
| collection | DOAJ |
| description | In this paper, a technique to develop small signal circuit (SSC) models of AlGaN/GaN high electron mobility transistors (HEMTs) using dependent current sources is presented. In this technique, experimentally measured broadband Y-parameters of AlGaN/GaN HEMTs are mathematically modeled as a sum of pole-residue terms. By representing each pole-residue term as a dependent current source, it is possible to develop an accurate SSC models for HEMTs which otherwise may not be possible using passive resistive-inductive-capacitive elements. The accuracy of the proposed SSC model is validated against the conventional SSC model using a 2nd, 3rd and 4th order rational function representation of the admittance branches of AlGaN/GaN HEMTs. Therefore, the proposed SSC model turns out to be highly robust in nature and can take care of any form of the transfer functions of the admittance branches between the gate, drain, and source terminal of an AlGaN/GaN HEMT. |
| first_indexed | 2024-04-12T17:17:30Z |
| format | Article |
| id | doaj.art-1f5d9dc0ce6a4a54a88802bd65a88721 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-04-12T17:17:30Z |
| publishDate | 2022-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-1f5d9dc0ce6a4a54a88802bd65a887212022-12-22T03:23:36ZengIEEEIEEE Journal of the Electron Devices Society2168-67342022-01-011079780710.1109/JEDS.2022.32080289896132An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current SourcesAakash Jadhav0Takashi Ozawa1Ali Baratov2Joel T. Asubar3https://orcid.org/0000-0002-1829-4129Masaaki Kuzuhara4https://orcid.org/0000-0001-5171-5565Akio Wakejima5https://orcid.org/0000-0001-5831-3673Shunpei Yamashita6Manato Deki7Shugo Nitta8https://orcid.org/0000-0002-8258-186XYoshio Honda9Hiroshi Amano10https://orcid.org/0000-0002-7598-2593Sourajeet Roy11https://orcid.org/0000-0002-9860-3242Biplab Sarkar12https://orcid.org/0000-0003-0074-0626Department of Electronics and Communications Engineering, Indian Institute of Technology Roorkee, Roorkee, IndiaDepartment of Electrical, Electronic and Computer Engineering, University of Fukui, Fukui, JapanDepartment of Electrical, Electronic and Computer Engineering, University of Fukui, Fukui, JapanDepartment of Electrical, Electronic and Computer Engineering, University of Fukui, Fukui, JapanDepartment of Electrical, Electronic and Computer Engineering, University of Fukui, Fukui, JapanDepartment of Electrical and Mechanical Engineering, Nagoya Institute of Technology, Nagoya, JapanDepartment of Electrical Engineering and Computer Science, Nagoya University, Nagoya, JapanDepartment of Electrical Engineering and Computer Science, Nagoya University, Nagoya, JapanDepartment of Electrical Engineering and Computer Science, Nagoya University, Nagoya, JapanDepartment of Electrical Engineering and Computer Science, Nagoya University, Nagoya, JapanDepartment of Electrical Engineering and Computer Science, Nagoya University, Nagoya, JapanDepartment of Electronics and Communications Engineering, Indian Institute of Technology Roorkee, Roorkee, IndiaDepartment of Electronics and Communications Engineering, Indian Institute of Technology Roorkee, Roorkee, IndiaIn this paper, a technique to develop small signal circuit (SSC) models of AlGaN/GaN high electron mobility transistors (HEMTs) using dependent current sources is presented. In this technique, experimentally measured broadband Y-parameters of AlGaN/GaN HEMTs are mathematically modeled as a sum of pole-residue terms. By representing each pole-residue term as a dependent current source, it is possible to develop an accurate SSC models for HEMTs which otherwise may not be possible using passive resistive-inductive-capacitive elements. The accuracy of the proposed SSC model is validated against the conventional SSC model using a 2nd, 3rd and 4th order rational function representation of the admittance branches of AlGaN/GaN HEMTs. Therefore, the proposed SSC model turns out to be highly robust in nature and can take care of any form of the transfer functions of the admittance branches between the gate, drain, and source terminal of an AlGaN/GaN HEMT.https://ieeexplore.ieee.org/document/9896132/HEMTsmall signal circuitvector fitrational functionsY-parameters |
| spellingShingle | Aakash Jadhav Takashi Ozawa Ali Baratov Joel T. Asubar Masaaki Kuzuhara Akio Wakejima Shunpei Yamashita Manato Deki Shugo Nitta Yoshio Honda Hiroshi Amano Sourajeet Roy Biplab Sarkar An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources IEEE Journal of the Electron Devices Society HEMT small signal circuit vector fit rational functions Y-parameters |
| title | An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources |
| title_full | An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources |
| title_fullStr | An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources |
| title_full_unstemmed | An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources |
| title_short | An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources |
| title_sort | accurate approach to develop small signal circuit models for algan gan hemts using rational functions and dependent current sources |
| topic | HEMT small signal circuit vector fit rational functions Y-parameters |
| url | https://ieeexplore.ieee.org/document/9896132/ |
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