Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient
<p>Abstract</p> <p>La-doped zirconia films, deposited by ALD at 300°C, were found to be amorphous with dielectric constants (k-values) up to 19. A tetragonal or cubic phase was induced by post-deposition annealing (PDA) at 900°C in both nitrogen and air. Higher k-...
| Những tác giả chính: | , , , , , |
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| Định dạng: | Bài viết |
| Ngôn ngữ: | English |
| Được phát hành: |
SpringerOpen
2011-01-01
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| Loạt: | Nanoscale Research Letters |
| Những chủ đề: | |
| Truy cập trực tuyến: | http://www.nanoscalereslett.com/content/6/1/48 |