Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient
<p>Abstract</p> <p>La-doped zirconia films, deposited by ALD at 300°C, were found to be amorphous with dielectric constants (k-values) up to 19. A tetragonal or cubic phase was induced by post-deposition annealing (PDA) at 900°C in both nitrogen and air. Higher k-...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2011-01-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://www.nanoscalereslett.com/content/6/1/48 |
| _version_ | 1797710349596622848 |
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| author | Werner M Taylor S Jones A Chalker P Zhao C Zhao Chun |
| author_facet | Werner M Taylor S Jones A Chalker P Zhao C Zhao Chun |
| author_sort | Werner M |
| collection | DOAJ |
| description | <p>Abstract</p> <p>La-doped zirconia films, deposited by ALD at 300°C, were found to be amorphous with dielectric constants (k-values) up to 19. A tetragonal or cubic phase was induced by post-deposition annealing (PDA) at 900°C in both nitrogen and air. Higher k-values (~32) were measured following PDA in air, but not after PDA in nitrogen. However, a significant dielectric relaxation was observed in the air-annealed film, and this is attributed to the formation of nano-crystallites. The relaxation behavior was modeled using the Curie–von Schweidler (CS) and Havriliak–Negami (HN) relationships. The k-value of the as-deposited films clearly shows a mixed CS and HN dependence on frequency. The CS dependence vanished after annealing in air, while the HN dependence disappeared after annealing in nitrogen.</p> |
| first_indexed | 2024-03-12T06:50:55Z |
| format | Article |
| id | doaj.art-1f6173f5687f4497831c450f33d82d06 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T06:50:55Z |
| publishDate | 2011-01-01 |
| publisher | SpringerOpen |
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| series | Nanoscale Research Letters |
| spelling | doaj.art-1f6173f5687f4497831c450f33d82d062023-09-03T00:16:22ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2011-01-016148Dielectric Relaxation of La-Doped Zirconia Caused by Annealing AmbientWerner MTaylor SJones AChalker PZhao CZhao Chun<p>Abstract</p> <p>La-doped zirconia films, deposited by ALD at 300°C, were found to be amorphous with dielectric constants (k-values) up to 19. A tetragonal or cubic phase was induced by post-deposition annealing (PDA) at 900°C in both nitrogen and air. Higher k-values (~32) were measured following PDA in air, but not after PDA in nitrogen. However, a significant dielectric relaxation was observed in the air-annealed film, and this is attributed to the formation of nano-crystallites. The relaxation behavior was modeled using the Curie–von Schweidler (CS) and Havriliak–Negami (HN) relationships. The k-value of the as-deposited films clearly shows a mixed CS and HN dependence on frequency. The CS dependence vanished after annealing in air, while the HN dependence disappeared after annealing in nitrogen.</p>http://www.nanoscalereslett.com/content/6/1/48LaZrO<sub>2</sub>La<sub>0.35</sub>Zr<sub>0.65</sub>O<sub>2</sub> |
| spellingShingle | Werner M Taylor S Jones A Chalker P Zhao C Zhao Chun Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient Nanoscale Research Letters La ZrO<sub>2</sub> La<sub>0.35</sub>Zr<sub>0.65</sub>O<sub>2</sub> |
| title | Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient |
| title_full | Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient |
| title_fullStr | Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient |
| title_full_unstemmed | Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient |
| title_short | Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient |
| title_sort | dielectric relaxation of la doped zirconia caused by annealing ambient |
| topic | La ZrO<sub>2</sub> La<sub>0.35</sub>Zr<sub>0.65</sub>O<sub>2</sub> |
| url | http://www.nanoscalereslett.com/content/6/1/48 |
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