Optical Design of Dilute Nitride Quantum Wells Vertical Cavity Semiconductor Optical Amplifiers for Communication Systems
III-V semiconductors components such as Gallium Arsenic (GaAs), Indium Antimony (InSb), Aluminum Arsenic (AlAs) and Indium Arsenic (InAs) have high carrier mobilities and direct energy gaps. This is making them indispensable for today’s optoelectronic devices such as semiconductor lasers and optical...
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| Format: | Article |
| Language: | English |
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Koya University
2016-05-01
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| Series: | ARO-The Scientific Journal of Koya University |
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| Online Access: | http://aro.koyauniversity.org/article/view/34 |