High-Temperature Characterizations of a Half-Bridge Wire-Bondless SiC MOSFET Module
SiC MOSFET allows higher temperature capability with higher switching efficiency than that of conventional Si devices, due to its superior electrical and thermal properties. Nevertheless, there are few reports on the systematic characterization of the SiC MOSFET power module operating at high-temper...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9568652/ |