An Investigation of Reliability and Life Time Prediction for Power MOSFET Using Electronically and Statistical Technique

This work is aimed to estimate the life time of the MOSFET power transistor through an empirical implementation work merged with statistical applications. In the empirical part the MOSFET power transistors are subjected to high frequency(50kHz) via an electronically controlled model using advanced d...

Descrizione completa

Dettagli Bibliografici
Autori principali: Abdul-hasan Abdallah Kadhim, Munaf Fathi Badr, Abdulkhaliq A.AL-Naqeeb
Natura: Articolo
Lingua:English
Pubblicazione: Unviversity of Technology- Iraq 2013-04-01
Serie:Engineering and Technology Journal
Soggetti:
Accesso online:https://etj.uotechnology.edu.iq/article_84170_3e35b4b98cb472a0c12624f08363665c.pdf