An Optimized Device Structure with Improved Erase Operation within the Indium Gallium Zinc Oxide Channel in Three-Dimensional NAND Flash Applications

An Optimized Device Structure with Improved Erase Operation within the Indium Gallium Zinc Oxide Channel in Three-Dimensional NAND Flash Applications

In this paper, we propose an optimized device structure to address issues in 3D NAND flash memory devices, which encounter difficulties when using the hole erase method due to the unfavorable hole characteristics of indium gallium zinc oxide (IGZO). The proposed structure mitigated the erase operati...

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Bibliographic Details
Main Authors: Seonjun Choi, Jin-Seong Park, Myounggon Kang, Hong-sik Jung, Yun-heub Song
Format: Article
Language:English
Published: MDPI AG 2024-01-01
Series:Electronics
Subjects:
3D NAND
polysilicon
IGZO
erase operation
Cell-On-Peri (COP)
Online Access:https://www.mdpi.com/2079-9292/13/2/451

Internet

https://www.mdpi.com/2079-9292/13/2/451

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