Determination of energy disorder value in amorphous oxide semiconductors
The amorphous material films are resistant to high-energy irradiation. Therefore, devices built using the properties of these materials can work in conditions of increased radiation much longer than devices using the properties of crystals. An important characteristic of these materials is their deg...
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| Format: | Article |
| Language: | English |
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Institute for Nuclear Research, National Academy of Sciences of Ukraine
2024-03-01
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| Series: | Âderna Fìzika ta Energetika |
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| Online Access: | http://jnpae.kinr.kiev.ua/25.1/Articles_PDF/jnpae-2024-25-0066-Fishchuk.pdf |