Strong Valence Electrons Dependent and Logical Relations of Elemental Impurities in 2D Binary Semiconductor: a Case of GeP3 Monolayer from Ab Initio Studies

Strong Valence Electrons Dependent and Logical Relations of Elemental Impurities in 2D Binary Semiconductor: a Case of GeP3 Monolayer from Ab Initio Studies

Abstract Using first-principle calculations within density functional theory, we investigate the electronic property and stability of substitutionally doped 2D GeP3 monolayer with dopants from group III to VI. The conducting properties are found to be dramatically modified by both the doping sites a...

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Bibliographic Details
Main Authors: Suihao Zhang, Rui Li, Xiaonan Fu, Yu Zhao, Chunyao Niu, Chong Li, Zaiping Zeng, Songyou Wang, Congxin Xia, Yu Jia
Format: Article
Language:English
Published: SpringerOpen 2019-09-01
Series:Nanoscale Research Letters
Subjects:
First-principle calculations
GeP3 monolayer
Co-doping
Formation energy
Online Access:http://link.springer.com/article/10.1186/s11671-019-3135-3

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http://link.springer.com/article/10.1186/s11671-019-3135-3

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