The ESD Characteristics of a pMOS-Triggered Bidirectional SCR in SOI BCD Technology
In this work, the electrostatic discharge (ESD) characteristics of a pMOS-triggered bidirectional silicon-controlled rectifier (PTBSCR) that was fabricated in a 0.18 μm silicon-on-insulator (SOI) bipolar-CMOS-DMOS (BCD) process, is investigated. The multi-snapback phenomenon was observed under the t...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-02-01
|
| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/11/4/546 |