A Semi-Floating Gate Memory with Tensile Stress for Enhanced Performance

A Semi-Floating Gate Memory with Tensile Stress for Enhanced Performance

With the continuous scaling down of devices, traditional one-transistor one-capacitor dynamic random access memory (1T-1C DRAM) has encountered great challenges originated from the large-volume capacitor and high leakage current. A semi-floating gate transistor has been proposed as a capacitor-less...

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Bibliographic Details
Main Authors: Ying Yuan, Shuye Jiang, Bingqi Sun, Lin Chen, Hao Zhu, Qingqing Sun, David Wei Zhang
Format: Article
Language:English
Published: MDPI AG 2019-04-01
Series:Electronics
Subjects:
semi-floating gate transistor
contact etch stop layer
tensive strain
retention
disturbance
Online Access:https://www.mdpi.com/2079-9292/8/4/414

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https://www.mdpi.com/2079-9292/8/4/414

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