A T-Shaped SOI Tunneling Field-Effect Transistor With Novel Operation Modes

A T-Shaped SOI Tunneling Field-Effect Transistor With Novel Operation Modes

We present a novel T-shaped tunneling field-effect transistor (TFET) on Si-on-insulator (SOI). The asymmetric source-drain structure can effectively suppress the ambipolar switching. The on-current (<inline-formula> <tex-math notation="LaTeX">$\text{I}_{\mathrm{ on}}$ </tex-...

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Bibliographic Details
Main Authors: Chenhe Liu, Qinghua Ren, Zhixi Chen, Lantian Zhao, Chang Liu, Qiang Liu, Wenjie Yu, Xinke Liu, Qing-Tai Zhao
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
TFET
SOI
ambipolar
low power
Online Access:https://ieeexplore.ieee.org/document/8871345/

Internet

https://ieeexplore.ieee.org/document/8871345/

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