Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory

Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory

In this study, sol–gel-processed amorphous-phase ZrO _2 was used as an active channel material to improve the resistive switching properties of resistive random access memories (RRAMs). ITO/ZrO _2 /Ag RRAM devices exhibit the properties of bipolar RRAMs. The effect of the post-annealing temperature...

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Bibliographic Details
Main Authors: Kyoungdu Kim, Woongki Hong, Changmin Lee, Won-Yong Lee, Do Won Kim, Hyeon Joong Kim, Hyuk-Jun Kwon, Hongki Kang, Jaewon Jang
Format: Article
Language:English
Published: IOP Publishing 2021-01-01
Series:Materials Research Express
Subjects:
sol-gel
ZrO2
resistive random access memory
amorphous phase
electrochemical metallization cell
Online Access:https://doi.org/10.1088/2053-1591/ac3400

Internet

https://doi.org/10.1088/2053-1591/ac3400

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