Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory
In this study, sol–gel-processed amorphous-phase ZrO _2 was used as an active channel material to improve the resistive switching properties of resistive random access memories (RRAMs). ITO/ZrO _2 /Ag RRAM devices exhibit the properties of bipolar RRAMs. The effect of the post-annealing temperature...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2021-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ac3400 |
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| author | Kyoungdu Kim Woongki Hong Changmin Lee Won-Yong Lee Do Won Kim Hyeon Joong Kim Hyuk-Jun Kwon Hongki Kang Jaewon Jang |
| author_facet | Kyoungdu Kim Woongki Hong Changmin Lee Won-Yong Lee Do Won Kim Hyeon Joong Kim Hyuk-Jun Kwon Hongki Kang Jaewon Jang |
| author_sort | Kyoungdu Kim |
| collection | DOAJ |
| description | In this study, sol–gel-processed amorphous-phase ZrO _2 was used as an active channel material to improve the resistive switching properties of resistive random access memories (RRAMs). ITO/ZrO _2 /Ag RRAM devices exhibit the properties of bipolar RRAMs. The effect of the post-annealing temperature on the electrical properties of the ZrO _2 RRAM was investigated. Unlike the ZrO _2 films annealed at 400 and 500 °C, those annealed at 300 °C were in amorphous phase. The RRAM based on the amorphous-phase ZrO _2 exhibited an improved high-resistance state (HRS) to low-resistance state ratio (over 10 ^6 ) as well as promising retention and endurance characteristics without deterioration. Furthermore, its disordered nature, which causes efficient carrier scattering, resulted in low carrier mobility and the lowest leakage current, influencing the HRS values. |
| first_indexed | 2024-03-12T15:41:52Z |
| format | Article |
| id | doaj.art-20b7257dac464e6d8443dc32c4f8b829 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:41:52Z |
| publishDate | 2021-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-20b7257dac464e6d8443dc32c4f8b8292023-08-09T15:55:25ZengIOP PublishingMaterials Research Express2053-15912021-01-0181111630110.1088/2053-1591/ac3400Sol-gel-processed amorphous-phase ZrO2 based resistive random access memoryKyoungdu Kim0Woongki Hong1Changmin Lee2Won-Yong Lee3Do Won Kim4Hyeon Joong Kim5Hyuk-Jun Kwon6Hongki Kang7Jaewon Jang8https://orcid.org/0000-0003-1908-0015School of Electronic and Electrical Engineering, Kyungpook National University , Daegu 41566, Republic of KoreaDepartment of Information and Communication Engineering, DGIST, Daegu 42988, Republic of KoreaSchool of Electronic and Electrical Engineering, Kyungpook National University , Daegu 41566, Republic of KoreaSchool of Electronic and Electrical Engineering, Kyungpook National University , Daegu 41566, Republic of KoreaSchool of Electronic and Electrical Engineering, Kyungpook National University , Daegu 41566, Republic of KoreaSchool of Electronic and Electrical Engineering, Kyungpook National University , Daegu 41566, Republic of KoreaDepartment of Information and Communication Engineering, DGIST, Daegu 42988, Republic of Korea; Convergence Research Advanced Centre for Olfaction, DGIST, Daegu 42988, Republic of KoreaDepartment of Information and Communication Engineering, DGIST, Daegu 42988, Republic of KoreaSchool of Electronic and Electrical Engineering, Kyungpook National University , Daegu 41566, Republic of Korea; School of Electronic Engineering, Kyungpook National University , Daegu 41566, Republic of KoreaIn this study, sol–gel-processed amorphous-phase ZrO _2 was used as an active channel material to improve the resistive switching properties of resistive random access memories (RRAMs). ITO/ZrO _2 /Ag RRAM devices exhibit the properties of bipolar RRAMs. The effect of the post-annealing temperature on the electrical properties of the ZrO _2 RRAM was investigated. Unlike the ZrO _2 films annealed at 400 and 500 °C, those annealed at 300 °C were in amorphous phase. The RRAM based on the amorphous-phase ZrO _2 exhibited an improved high-resistance state (HRS) to low-resistance state ratio (over 10 ^6 ) as well as promising retention and endurance characteristics without deterioration. Furthermore, its disordered nature, which causes efficient carrier scattering, resulted in low carrier mobility and the lowest leakage current, influencing the HRS values.https://doi.org/10.1088/2053-1591/ac3400sol-gelZrO2resistive random access memoryamorphous phaseelectrochemical metallization cell |
| spellingShingle | Kyoungdu Kim Woongki Hong Changmin Lee Won-Yong Lee Do Won Kim Hyeon Joong Kim Hyuk-Jun Kwon Hongki Kang Jaewon Jang Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory Materials Research Express sol-gel ZrO2 resistive random access memory amorphous phase electrochemical metallization cell |
| title | Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory |
| title_full | Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory |
| title_fullStr | Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory |
| title_full_unstemmed | Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory |
| title_short | Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory |
| title_sort | sol gel processed amorphous phase zro2 based resistive random access memory |
| topic | sol-gel ZrO2 resistive random access memory amorphous phase electrochemical metallization cell |
| url | https://doi.org/10.1088/2053-1591/ac3400 |
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