Using Anisotropic Silicon Etch for Change the Crystal Orientation of Silicon Wafer
In this work، anisotropic silicon etch using KOH ، optical microscopic and X-ray diffraction testing، were used to determine the crystal orientation of the silicon wafer(100) plane , where the mechanical polishing and wet etching described the geometric dislocations pits which refers to the crystall...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Unviversity of Technology- Iraq
2012-04-01
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| Series: | Engineering and Technology Journal |
| Online Access: | https://etj.uotechnology.edu.iq/article_56876_51cdc47f659c17b8e771c97295f312fa.pdf |
| _version_ | 1797325490990612480 |
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| author | Saria D.mohammed Arrej Rlyadh Saeed Atheer Ibraheem Bbd |
| author_facet | Saria D.mohammed Arrej Rlyadh Saeed Atheer Ibraheem Bbd |
| author_sort | Saria D.mohammed |
| collection | DOAJ |
| description | In this work، anisotropic silicon etch using KOH ، optical microscopic and X-ray diffraction testing، were used to determine the crystal orientation of the silicon wafer(100) plane , where the mechanical polishing and wet etching described the geometric dislocations pits which refers to the crystallographic and the level of (100). Microscopic examination have been described the geometric dislocations pits which reflected from plane (100) in the forms of four fold flat symmetry which refers to that plane in Silicon wafer, as the distribution of Miller Indices in the cubic system, by the impact chemical wet KOH with concentration 30 wt%, and an etching temperature of 70°C. The crystal orientation of silicon wafer has been changed from (100) to (111) plane, by chemical wet KOH through cutting 54,7°, the dislocations pits appear in geometric forms in conical shape which refers to the direction [111] for silicon wafer، by the impact chemical wet KOH with concentration 44 wt%, and an etching temperature of 120°C for 20-30min |
| first_indexed | 2024-03-08T06:10:12Z |
| format | Article |
| id | doaj.art-20bd6f2db1c046858adaf1da9f8fcbb6 |
| institution | Directory Open Access Journal |
| issn | 1681-6900 2412-0758 |
| language | English |
| last_indexed | 2024-03-08T06:10:12Z |
| publishDate | 2012-04-01 |
| publisher | Unviversity of Technology- Iraq |
| record_format | Article |
| series | Engineering and Technology Journal |
| spelling | doaj.art-20bd6f2db1c046858adaf1da9f8fcbb62024-02-04T17:39:05ZengUnviversity of Technology- IraqEngineering and Technology Journal1681-69002412-07582012-04-0130821222710.30684/etj.30.8.1556876Using Anisotropic Silicon Etch for Change the Crystal Orientation of Silicon WaferSaria D.mohammedArrej Rlyadh SaeedAtheer Ibraheem BbdIn this work، anisotropic silicon etch using KOH ، optical microscopic and X-ray diffraction testing، were used to determine the crystal orientation of the silicon wafer(100) plane , where the mechanical polishing and wet etching described the geometric dislocations pits which refers to the crystallographic and the level of (100). Microscopic examination have been described the geometric dislocations pits which reflected from plane (100) in the forms of four fold flat symmetry which refers to that plane in Silicon wafer, as the distribution of Miller Indices in the cubic system, by the impact chemical wet KOH with concentration 30 wt%, and an etching temperature of 70°C. The crystal orientation of silicon wafer has been changed from (100) to (111) plane, by chemical wet KOH through cutting 54,7°, the dislocations pits appear in geometric forms in conical shape which refers to the direction [111] for silicon wafer، by the impact chemical wet KOH with concentration 44 wt%, and an etching temperature of 120°C for 20-30minhttps://etj.uotechnology.edu.iq/article_56876_51cdc47f659c17b8e771c97295f312fa.pdf |
| spellingShingle | Saria D.mohammed Arrej Rlyadh Saeed Atheer Ibraheem Bbd Using Anisotropic Silicon Etch for Change the Crystal Orientation of Silicon Wafer Engineering and Technology Journal |
| title | Using Anisotropic Silicon Etch for Change the Crystal Orientation of Silicon Wafer |
| title_full | Using Anisotropic Silicon Etch for Change the Crystal Orientation of Silicon Wafer |
| title_fullStr | Using Anisotropic Silicon Etch for Change the Crystal Orientation of Silicon Wafer |
| title_full_unstemmed | Using Anisotropic Silicon Etch for Change the Crystal Orientation of Silicon Wafer |
| title_short | Using Anisotropic Silicon Etch for Change the Crystal Orientation of Silicon Wafer |
| title_sort | using anisotropic silicon etch for change the crystal orientation of silicon wafer |
| url | https://etj.uotechnology.edu.iq/article_56876_51cdc47f659c17b8e771c97295f312fa.pdf |
| work_keys_str_mv | AT sariadmohammed usinganisotropicsiliconetchforchangethecrystalorientationofsiliconwafer AT arrejrlyadhsaeed usinganisotropicsiliconetchforchangethecrystalorientationofsiliconwafer AT atheeribraheembbd usinganisotropicsiliconetchforchangethecrystalorientationofsiliconwafer |