Highly sensitive and robust 3C-SiC/Si pressure sensor with stress amplification structure

Highly sensitive and robust 3C-SiC/Si pressure sensor with stress amplification structure

SiC based pressure sensors show tremendous promise for harsh environment applications thanks to their excellent mechanical, electrical, thermal, and chemical properties. This paper presents the design, fabrication, and characterisation of a highly sensitive and robust 3C-SiC/Si pressure sensor. The...

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Bibliographic Details
Main Authors: Braiden Tong, Tuan-Hung Nguyen, Hong-Quan Nguyen, Tuan-Khoa Nguyen, Thanh Nguyen, Toan Dinh, Ngo Vo Ke Thanh, Truong Huu Ly, Nguyen Chi Cuong, Hoang Ba Cuong, Trinh Xuan Thang, Van Thanh Dau, Dzung Viet Dao
Format: Article
Language:English
Published: Elsevier 2022-12-01
Series:Materials & Design
Subjects:
Pressure Sensor
Piezoresistive effect
Stress amplification
SiC
Online Access:http://www.sciencedirect.com/science/article/pii/S0264127522009194

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http://www.sciencedirect.com/science/article/pii/S0264127522009194

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