Control of Ni/β-Ga<sub>2</sub>O<sub>3</sub> Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer

Control of Ni/β-Ga<sub>2</sub>O<sub>3</sub> Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer

Controlling the Schottky barrier height (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>ϕ</mi><mi>B</mi></msub></mrow></semantics></math><...

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Bibliographic Details
Main Authors: Madani Labed, Nouredine Sengouga, You Seung Rim
Format: Article
Language:English
Published: MDPI AG 2022-03-01
Series:Nanomaterials
Subjects:
SBD
β-Ga<sub>2</sub>O<sub>3</sub>
electron-beam evaporation
interfacial traps
graphene
workfunction
Online Access:https://www.mdpi.com/2079-4991/12/5/827

Internet

https://www.mdpi.com/2079-4991/12/5/827

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