Output power enhancement of GaN-based flip-chip light-emitting diodes via conical structures generated by a monolayer of nanospheres
This letter describes the output power enhancement of the GaN-based flip-chip light-emitting diodes (FC LED) featuring conical structures fabricated by etching a self-assembled monolayer SiO2 spheres as the hard mask. By roughening the surface of FC LED components, it increases structural size of th...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4967508 |