Output power enhancement of GaN-based flip-chip light-emitting diodes via conical structures generated by a monolayer of nanospheres

This letter describes the output power enhancement of the GaN-based flip-chip light-emitting diodes (FC LED) featuring conical structures fabricated by etching a self-assembled monolayer SiO2 spheres as the hard mask. By roughening the surface of FC LED components, it increases structural size of th...

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Main Authors: Mai-Chih Liu, Chang-Rong Lin, Chia-Hua Chan
Format: Article
Language:English
Published: AIP Publishing LLC 2016-11-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4967508
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author Mai-Chih Liu
Chang-Rong Lin
Chia-Hua Chan
author_facet Mai-Chih Liu
Chang-Rong Lin
Chia-Hua Chan
author_sort Mai-Chih Liu
collection DOAJ
description This letter describes the output power enhancement of the GaN-based flip-chip light-emitting diodes (FC LED) featuring conical structures fabricated by etching a self-assembled monolayer SiO2 spheres as the hard mask. By roughening the surface of FC LED components, it increases structural size of the components and elevates the light extraction efficiency of FC LED. At a constant current of 400 mA, the output power of the FC LED with 1200 nm conical structures is 638.1 mW and enhanced by 6.1% compared with the FC LED without surface roughening.
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spelling doaj.art-20ed17d9ad244e1c930ddb36f3eaa9042022-12-22T01:45:03ZengAIP Publishing LLCAIP Advances2158-32262016-11-01611115013115013-710.1063/1.4967508042611ADVOutput power enhancement of GaN-based flip-chip light-emitting diodes via conical structures generated by a monolayer of nanospheresMai-Chih Liu0Chang-Rong Lin1Chia-Hua Chan2Graduate Institute of Energy Engineering, National Central University, Zhongli District, Taoyuan City 32001, Taiwan (R.O.C)Graduate Institute of Energy Engineering, National Central University, Zhongli District, Taoyuan City 32001, Taiwan (R.O.C)Graduate Institute of Energy Engineering, National Central University, Zhongli District, Taoyuan City 32001, Taiwan (R.O.C)This letter describes the output power enhancement of the GaN-based flip-chip light-emitting diodes (FC LED) featuring conical structures fabricated by etching a self-assembled monolayer SiO2 spheres as the hard mask. By roughening the surface of FC LED components, it increases structural size of the components and elevates the light extraction efficiency of FC LED. At a constant current of 400 mA, the output power of the FC LED with 1200 nm conical structures is 638.1 mW and enhanced by 6.1% compared with the FC LED without surface roughening.http://dx.doi.org/10.1063/1.4967508
spellingShingle Mai-Chih Liu
Chang-Rong Lin
Chia-Hua Chan
Output power enhancement of GaN-based flip-chip light-emitting diodes via conical structures generated by a monolayer of nanospheres
AIP Advances
title Output power enhancement of GaN-based flip-chip light-emitting diodes via conical structures generated by a monolayer of nanospheres
title_full Output power enhancement of GaN-based flip-chip light-emitting diodes via conical structures generated by a monolayer of nanospheres
title_fullStr Output power enhancement of GaN-based flip-chip light-emitting diodes via conical structures generated by a monolayer of nanospheres
title_full_unstemmed Output power enhancement of GaN-based flip-chip light-emitting diodes via conical structures generated by a monolayer of nanospheres
title_short Output power enhancement of GaN-based flip-chip light-emitting diodes via conical structures generated by a monolayer of nanospheres
title_sort output power enhancement of gan based flip chip light emitting diodes via conical structures generated by a monolayer of nanospheres
url http://dx.doi.org/10.1063/1.4967508
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AT changronglin outputpowerenhancementofganbasedflipchiplightemittingdiodesviaconicalstructuresgeneratedbyamonolayerofnanospheres
AT chiahuachan outputpowerenhancementofganbasedflipchiplightemittingdiodesviaconicalstructuresgeneratedbyamonolayerofnanospheres