Output power enhancement of GaN-based flip-chip light-emitting diodes via conical structures generated by a monolayer of nanospheres
This letter describes the output power enhancement of the GaN-based flip-chip light-emitting diodes (FC LED) featuring conical structures fabricated by etching a self-assembled monolayer SiO2 spheres as the hard mask. By roughening the surface of FC LED components, it increases structural size of th...
Main Authors: | , , |
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Format: | Article |
Language: | English |
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AIP Publishing LLC
2016-11-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.4967508 |
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author | Mai-Chih Liu Chang-Rong Lin Chia-Hua Chan |
author_facet | Mai-Chih Liu Chang-Rong Lin Chia-Hua Chan |
author_sort | Mai-Chih Liu |
collection | DOAJ |
description | This letter describes the output power enhancement of the GaN-based flip-chip light-emitting diodes (FC LED) featuring conical structures fabricated by etching a self-assembled monolayer SiO2 spheres as the hard mask. By roughening the surface of FC LED components, it increases structural size of the components and elevates the light extraction efficiency of FC LED. At a constant current of 400 mA, the output power of the FC LED with 1200 nm conical structures is 638.1 mW and enhanced by 6.1% compared with the FC LED without surface roughening. |
first_indexed | 2024-12-10T14:26:49Z |
format | Article |
id | doaj.art-20ed17d9ad244e1c930ddb36f3eaa904 |
institution | Directory Open Access Journal |
issn | 2158-3226 |
language | English |
last_indexed | 2024-12-10T14:26:49Z |
publishDate | 2016-11-01 |
publisher | AIP Publishing LLC |
record_format | Article |
series | AIP Advances |
spelling | doaj.art-20ed17d9ad244e1c930ddb36f3eaa9042022-12-22T01:45:03ZengAIP Publishing LLCAIP Advances2158-32262016-11-01611115013115013-710.1063/1.4967508042611ADVOutput power enhancement of GaN-based flip-chip light-emitting diodes via conical structures generated by a monolayer of nanospheresMai-Chih Liu0Chang-Rong Lin1Chia-Hua Chan2Graduate Institute of Energy Engineering, National Central University, Zhongli District, Taoyuan City 32001, Taiwan (R.O.C)Graduate Institute of Energy Engineering, National Central University, Zhongli District, Taoyuan City 32001, Taiwan (R.O.C)Graduate Institute of Energy Engineering, National Central University, Zhongli District, Taoyuan City 32001, Taiwan (R.O.C)This letter describes the output power enhancement of the GaN-based flip-chip light-emitting diodes (FC LED) featuring conical structures fabricated by etching a self-assembled monolayer SiO2 spheres as the hard mask. By roughening the surface of FC LED components, it increases structural size of the components and elevates the light extraction efficiency of FC LED. At a constant current of 400 mA, the output power of the FC LED with 1200 nm conical structures is 638.1 mW and enhanced by 6.1% compared with the FC LED without surface roughening.http://dx.doi.org/10.1063/1.4967508 |
spellingShingle | Mai-Chih Liu Chang-Rong Lin Chia-Hua Chan Output power enhancement of GaN-based flip-chip light-emitting diodes via conical structures generated by a monolayer of nanospheres AIP Advances |
title | Output power enhancement of GaN-based flip-chip light-emitting diodes via conical structures generated by a monolayer of nanospheres |
title_full | Output power enhancement of GaN-based flip-chip light-emitting diodes via conical structures generated by a monolayer of nanospheres |
title_fullStr | Output power enhancement of GaN-based flip-chip light-emitting diodes via conical structures generated by a monolayer of nanospheres |
title_full_unstemmed | Output power enhancement of GaN-based flip-chip light-emitting diodes via conical structures generated by a monolayer of nanospheres |
title_short | Output power enhancement of GaN-based flip-chip light-emitting diodes via conical structures generated by a monolayer of nanospheres |
title_sort | output power enhancement of gan based flip chip light emitting diodes via conical structures generated by a monolayer of nanospheres |
url | http://dx.doi.org/10.1063/1.4967508 |
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