Ferroelectricity in dopant-free HfO2 thin films prepared by pulsed laser deposition

Ferroelectricity in dopant-free HfO2 thin films prepared by pulsed laser deposition

As a high-k material, hafnium oxide (HfO2) has been used in gate dielectrics for decades. Since the discovery of polar phase in Si-doped HfO2 films, chemical doping has been widely demonstrated as an effective approach to stabilize the ferroelectric phase in HfO2 based thin films. However, the extra...

Full description

Bibliographic Details
Main Authors: Yongjian Luo, Zhenxun Tang, Xiaozhe Yin, Chao Chen, Zhen Fan, Minghui Qin, Min Zeng, Guofu Zhou, Xingsen Gao, Xubing Lu, Jiyan Dai, Deyang Chen, Jun-Ming Liu
Format: Article
Language:English
Published: Elsevier 2022-03-01
Series:Journal of Materiomics
Subjects:
Hafnium oxide
Pulsed laser deposition
Ferroelectricity
Orthorhombic phase
Online Access:http://www.sciencedirect.com/science/article/pii/S2352847821001398

Internet

http://www.sciencedirect.com/science/article/pii/S2352847821001398

Similar Items