Ferroelectricity in dopant-free HfO2 thin films prepared by pulsed laser deposition
As a high-k material, hafnium oxide (HfO2) has been used in gate dielectrics for decades. Since the discovery of polar phase in Si-doped HfO2 films, chemical doping has been widely demonstrated as an effective approach to stabilize the ferroelectric phase in HfO2 based thin films. However, the extra...
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| Format: | Article |
| Language: | English |
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Elsevier
2022-03-01
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| Series: | Journal of Materiomics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352847821001398 |
| _version_ | 1797721478704136192 |
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| author | Yongjian Luo Zhenxun Tang Xiaozhe Yin Chao Chen Zhen Fan Minghui Qin Min Zeng Guofu Zhou Xingsen Gao Xubing Lu Jiyan Dai Deyang Chen Jun-Ming Liu |
| author_facet | Yongjian Luo Zhenxun Tang Xiaozhe Yin Chao Chen Zhen Fan Minghui Qin Min Zeng Guofu Zhou Xingsen Gao Xubing Lu Jiyan Dai Deyang Chen Jun-Ming Liu |
| author_sort | Yongjian Luo |
| collection | DOAJ |
| description | As a high-k material, hafnium oxide (HfO2) has been used in gate dielectrics for decades. Since the discovery of polar phase in Si-doped HfO2 films, chemical doping has been widely demonstrated as an effective approach to stabilize the ferroelectric phase in HfO2 based thin films. However, the extra capping layer deposition, post-growth annealing and wake-up effect are usually required to arouse the ferroelectricity in HfO2 based thin films, resulting in the increase of complexity for sample synthesis and the impediment of device application. In this study, the ferroelectricity is observed in non-capped dopant-free HfO2 thin films prepared by pulsed laser deposition (PLD) without post-growth annealing. By adjusting the deposited temperature, oxygen pressure and thickness, the maximum polarization up to 14.7 μC/cm2 was obtained in 7.4 nm-thick film. The fraction of orthorhombic phase, concentrations of defects and size effects are considered as possible mechanisms for the influences of ferroelectric properties. This study indicates that PLD is an effective technique to fabricate high-quality ferroelectric HfO2 thin films in the absence of chemical doping, capping layer deposition and post-growth annealing, which may boost the process of nonvolatile memory device application. |
| first_indexed | 2024-03-12T09:34:50Z |
| format | Article |
| id | doaj.art-20fdcf2e2053480a901048ea7a06cd56 |
| institution | Directory Open Access Journal |
| issn | 2352-8478 |
| language | English |
| last_indexed | 2024-03-12T09:34:50Z |
| publishDate | 2022-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Materiomics |
| spelling | doaj.art-20fdcf2e2053480a901048ea7a06cd562023-09-02T13:45:16ZengElsevierJournal of Materiomics2352-84782022-03-0182311318Ferroelectricity in dopant-free HfO2 thin films prepared by pulsed laser depositionYongjian Luo0Zhenxun Tang1Xiaozhe Yin2Chao Chen3Zhen Fan4Minghui Qin5Min Zeng6Guofu Zhou7Xingsen Gao8Xubing Lu9Jiyan Dai10Deyang Chen11Jun-Ming Liu12Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, ChinaInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, ChinaInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, ChinaInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China; Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, ChinaInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, ChinaInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, ChinaInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, ChinaGuangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, ChinaInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, ChinaInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, ChinaDepartment of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China; Corresponding author.Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China; Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China; Corresponding author. Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China.Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, ChinaAs a high-k material, hafnium oxide (HfO2) has been used in gate dielectrics for decades. Since the discovery of polar phase in Si-doped HfO2 films, chemical doping has been widely demonstrated as an effective approach to stabilize the ferroelectric phase in HfO2 based thin films. However, the extra capping layer deposition, post-growth annealing and wake-up effect are usually required to arouse the ferroelectricity in HfO2 based thin films, resulting in the increase of complexity for sample synthesis and the impediment of device application. In this study, the ferroelectricity is observed in non-capped dopant-free HfO2 thin films prepared by pulsed laser deposition (PLD) without post-growth annealing. By adjusting the deposited temperature, oxygen pressure and thickness, the maximum polarization up to 14.7 μC/cm2 was obtained in 7.4 nm-thick film. The fraction of orthorhombic phase, concentrations of defects and size effects are considered as possible mechanisms for the influences of ferroelectric properties. This study indicates that PLD is an effective technique to fabricate high-quality ferroelectric HfO2 thin films in the absence of chemical doping, capping layer deposition and post-growth annealing, which may boost the process of nonvolatile memory device application.http://www.sciencedirect.com/science/article/pii/S2352847821001398Hafnium oxidePulsed laser depositionFerroelectricityOrthorhombic phase |
| spellingShingle | Yongjian Luo Zhenxun Tang Xiaozhe Yin Chao Chen Zhen Fan Minghui Qin Min Zeng Guofu Zhou Xingsen Gao Xubing Lu Jiyan Dai Deyang Chen Jun-Ming Liu Ferroelectricity in dopant-free HfO2 thin films prepared by pulsed laser deposition Journal of Materiomics Hafnium oxide Pulsed laser deposition Ferroelectricity Orthorhombic phase |
| title | Ferroelectricity in dopant-free HfO2 thin films prepared by pulsed laser deposition |
| title_full | Ferroelectricity in dopant-free HfO2 thin films prepared by pulsed laser deposition |
| title_fullStr | Ferroelectricity in dopant-free HfO2 thin films prepared by pulsed laser deposition |
| title_full_unstemmed | Ferroelectricity in dopant-free HfO2 thin films prepared by pulsed laser deposition |
| title_short | Ferroelectricity in dopant-free HfO2 thin films prepared by pulsed laser deposition |
| title_sort | ferroelectricity in dopant free hfo2 thin films prepared by pulsed laser deposition |
| topic | Hafnium oxide Pulsed laser deposition Ferroelectricity Orthorhombic phase |
| url | http://www.sciencedirect.com/science/article/pii/S2352847821001398 |
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