Structural, Morphological, Vibrational and Optical Properties of GaN Films Grown by Reactive Sputtering: The Effect of RF Power at Low Working Pressure Limit
Abstract This work reports the properties of GaN films grown onto c-Si (100) at relatively low substrate temperature (400°C) by reactive magnetron sputtering. The study depicts the effect of working pressure and RF power on the GaN film structural, vibrational and optical properties characterized by...
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| Format: | Article |
| Language: | English |
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Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol)
2022-01-01
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| Series: | Materials Research |
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| Online Access: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392022000100240&lng=en&tlng=en |
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| author | R. S. de Oliveira H. A. Folli C. Stegemann I. M. Horta B. S. Damasceno W. Miyakawa A. L. J. Pereira M. Massi A. S. da Silva Sobrinho D. M. G. Leite |
| author_facet | R. S. de Oliveira H. A. Folli C. Stegemann I. M. Horta B. S. Damasceno W. Miyakawa A. L. J. Pereira M. Massi A. S. da Silva Sobrinho D. M. G. Leite |
| author_sort | R. S. de Oliveira |
| collection | DOAJ |
| description | Abstract This work reports the properties of GaN films grown onto c-Si (100) at relatively low substrate temperature (400°C) by reactive magnetron sputtering. The study depicts the effect of working pressure and RF power on the GaN film structural, vibrational and optical properties characterized by X-ray diffraction, atomic force and scanning electron microscopies, Raman spectroscopy and spectroscopic ellipsometry. Unusual low pressure deposition condition (0.40 Pa) was achieved by using a separated argon inlet directed to the Ga target surface, resulting in improved crystalline quality of the films. In this condition, the preferential crystalline orientation, the surface morphology and the optical gap of the GaN films show a strong dependence on the RF power applied to the Ga target, where low RF power (30-60 W) was responsible for increasing the c-axis orientation and the optical gap, while higher RF power (75-90 W) decreased the overall crystal quality and increased the surface roughness. |
| first_indexed | 2024-12-20T07:29:41Z |
| format | Article |
| id | doaj.art-2117ac92ff414944a2e3510f8165c2bb |
| institution | Directory Open Access Journal |
| issn | 1516-1439 |
| language | English |
| last_indexed | 2024-12-20T07:29:41Z |
| publishDate | 2022-01-01 |
| publisher | Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol) |
| record_format | Article |
| series | Materials Research |
| spelling | doaj.art-2117ac92ff414944a2e3510f8165c2bb2022-12-21T19:48:27ZengAssociação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol)Materials Research1516-14392022-01-012510.1590/1980-5373-mr-2021-0432Structural, Morphological, Vibrational and Optical Properties of GaN Films Grown by Reactive Sputtering: The Effect of RF Power at Low Working Pressure LimitR. S. de OliveiraH. A. FolliC. StegemannI. M. HortaB. S. DamascenoW. MiyakawaA. L. J. PereiraM. Massihttps://orcid.org/0000-0002-7117-8039A. S. da Silva Sobrinhohttps://orcid.org/0000-0001-7227-9176D. M. G. Leitehttps://orcid.org/0000-0002-1792-6171Abstract This work reports the properties of GaN films grown onto c-Si (100) at relatively low substrate temperature (400°C) by reactive magnetron sputtering. The study depicts the effect of working pressure and RF power on the GaN film structural, vibrational and optical properties characterized by X-ray diffraction, atomic force and scanning electron microscopies, Raman spectroscopy and spectroscopic ellipsometry. Unusual low pressure deposition condition (0.40 Pa) was achieved by using a separated argon inlet directed to the Ga target surface, resulting in improved crystalline quality of the films. In this condition, the preferential crystalline orientation, the surface morphology and the optical gap of the GaN films show a strong dependence on the RF power applied to the Ga target, where low RF power (30-60 W) was responsible for increasing the c-axis orientation and the optical gap, while higher RF power (75-90 W) decreased the overall crystal quality and increased the surface roughness.http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392022000100240&lng=en&tlng=enGaNreactive sputteringthin film |
| spellingShingle | R. S. de Oliveira H. A. Folli C. Stegemann I. M. Horta B. S. Damasceno W. Miyakawa A. L. J. Pereira M. Massi A. S. da Silva Sobrinho D. M. G. Leite Structural, Morphological, Vibrational and Optical Properties of GaN Films Grown by Reactive Sputtering: The Effect of RF Power at Low Working Pressure Limit Materials Research GaN reactive sputtering thin film |
| title | Structural, Morphological, Vibrational and Optical Properties of GaN Films Grown by Reactive Sputtering: The Effect of RF Power at Low Working Pressure Limit |
| title_full | Structural, Morphological, Vibrational and Optical Properties of GaN Films Grown by Reactive Sputtering: The Effect of RF Power at Low Working Pressure Limit |
| title_fullStr | Structural, Morphological, Vibrational and Optical Properties of GaN Films Grown by Reactive Sputtering: The Effect of RF Power at Low Working Pressure Limit |
| title_full_unstemmed | Structural, Morphological, Vibrational and Optical Properties of GaN Films Grown by Reactive Sputtering: The Effect of RF Power at Low Working Pressure Limit |
| title_short | Structural, Morphological, Vibrational and Optical Properties of GaN Films Grown by Reactive Sputtering: The Effect of RF Power at Low Working Pressure Limit |
| title_sort | structural morphological vibrational and optical properties of gan films grown by reactive sputtering the effect of rf power at low working pressure limit |
| topic | GaN reactive sputtering thin film |
| url | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392022000100240&lng=en&tlng=en |
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