Comprehensive mobility study of silicon nanowire transistors using multi-subband models

Comprehensive mobility study of silicon nanowire transistors using multi-subband models

Spatial confinement is important in advanced More Moore devices, such as nanowire transistors (NWTs), where the basic charge transport properties must be revised beyond the bulk crystal assumptions. This work presents a comprehensive and general overview of the electron mobility in aggressively-scal...

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Bibliographic Details
Main Authors: Cristina Medina-Bailon, Mihail Nedjalkov, Vihar Georgiev, Siegfried Selberherr, Asen Asenov
Format: Article
Language:English
Published: IOP Publishing 2023-01-01
Series:Nano Express
Subjects:
silicon nanowire field-effect transistors
one-dimensional multi-subband scattering models
confined charge transport
Poisson-Schroödinger solvers
Kubo-Greenwood formalism
Online Access:https://doi.org/10.1088/2632-959X/acdb8a

Internet

https://doi.org/10.1088/2632-959X/acdb8a

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