Gate‐tunable spin valve effect in Fe3GeTe2‐based van der Waals heterostructures

Gate‐tunable spin valve effect in Fe3GeTe2‐based van der Waals heterostructures

Abstract Magnetic tunnel junctions (MTJs), a prominent type of spintronic device based on the spin valve effect, have facilitated the development of numerous spintronic applications. The technical appeal for the next‐generation MTJ devices has been proposed in two directions: improving device perfor...

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Bibliographic Details
Main Authors: Ling Zhou, Junwei Huang, Ming Tang, Caiyu Qiu, Feng Qin, Caorong Zhang, Zeya Li, Di Wu, Hongtao Yuan
Format: Article
Language:English
Published: Wiley 2023-03-01
Series:InfoMat
Subjects:
Fe3GeTe2
magnetic tunnel junction
magnetoresistance
spin valve
van der Waals heterostructure
Online Access:https://doi.org/10.1002/inf2.12371

Internet

https://doi.org/10.1002/inf2.12371

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