Monolithic 3D integration of back-end compatible 2D material FET on Si FinFET

Monolithic 3D integration of back-end compatible 2D material FET on Si FinFET

Abstract The performance enhancement of integrated circuits relying on dimension scaling (i.e., following Moore’s Law) is more and more challenging owing to the physical limit of Si materials. Monolithic three-dimensional (M3D) integration has been considered as a powerful scheme to further boost up...

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Bibliographic Details
Main Authors: Shi-Xian Guan, Tilo H. Yang, Chih-Hao Yang, Chuan-Jie Hong, Bor-Wei Liang, Kristan Bryan Simbulan, Jyun-Hong Chen, Chun-Jung Su, Kai-Shin Li, Yuan-Liang Zhong, Lain-Jong Li, Yann-Wen Lan
Format: Article
Language:English
Published: Nature Portfolio 2023-02-01
Series:npj 2D Materials and Applications
Online Access:https://doi.org/10.1038/s41699-023-00371-7

Internet

https://doi.org/10.1038/s41699-023-00371-7

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