High-Mobility and H<sub>2</sub>-Anneal Tolerant InGaSiO/InGaZnO/InGaSiO Double Hetero Channel Thin Film Transistor for Si-LSI Compatible Process

High-Mobility and H<sub>2</sub>-Anneal Tolerant InGaSiO/InGaZnO/InGaSiO Double Hetero Channel Thin Film Transistor for Si-LSI Compatible Process

We demonstrate a high-mobility and H<sub>2</sub>-anneal tolerant InGaSiO/InGaZnO/InGaSiO double heterochannel (DH) thin film transistor (TFT) for 3-D integration with Si CMOS-LSI applications. A novel oxide semiconductor material, InGaSiO (Si/In ratio &gt; 0.47) was found to exhibit...

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Bibliographic Details
Main Authors: Nobuyoshi Saito, Kentaro Miura, Tomomasa Ueda, Tsutomu Tezuka, Keiji Ikeda
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Oxide semiconductor
thermal stability
mobility
BEOL transistor
double heterochannel
Online Access:https://ieeexplore.ieee.org/document/8281117/

Internet

https://ieeexplore.ieee.org/document/8281117/

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