Is chemical vapor deposition of monolayer WSe2 comparable to other synthetic routes?
Chemical vapor deposition (CVD) can produce wafer-scale transition-metal dichalcogenide (TMD) monolayers for the integration of electronic and optoelectronic devices. Nonetheless, the material quality of the CVD-grown TMDs still remains controversial. Here, we compare the quality of representative W...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2023-11-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0175469 |
| _version_ | 1827595806999314432 |
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| author | Soo Ho Choi Sang-Hyeok Yang Sehwan Park Byeong Wook Cho Tuan Dung Nguyen Jung Ho Kim Young-Min Kim Ki Kang Kim Young Hee Lee |
| author_facet | Soo Ho Choi Sang-Hyeok Yang Sehwan Park Byeong Wook Cho Tuan Dung Nguyen Jung Ho Kim Young-Min Kim Ki Kang Kim Young Hee Lee |
| author_sort | Soo Ho Choi |
| collection | DOAJ |
| description | Chemical vapor deposition (CVD) can produce wafer-scale transition-metal dichalcogenide (TMD) monolayers for the integration of electronic and optoelectronic devices. Nonetheless, the material quality of the CVD-grown TMDs still remains controversial. Here, we compare the quality of representative WSe2 monolayers grown by CVD compared to that obtained by other synthesis methods: bulk-grown-chemical vapor transport (CVT) and flux. Through the use of a deep-learning–based algorithm to analyze atomic-resolution scanning transmission electron microscopy images, we confirm that Se vacancies (VSe) are the primary defects in WSe2, with a defect density of ∼5.3 × 1013 cm−2 in the CVD-grown sample, within the same order of magnitude of other methods (∼3.9 × 1013 cm−2 from CVT-grown samples and ∼2.7 × 1013 cm−2 from flux-grown samples). The carrier concentration in field-effect transistors at room temperature is ∼5.84 × 1012 cm−2 from a CVD-grown sample, comparable to other methods (6–7 × 1012 cm−2). The field-effect mobility of the CVD-grown sample is slightly lower than that of other synthesis methods, together with similar trends in on-current. While the difference in photoluminescence intensity is not appreciable at room temperature, different intensities of defect-related localized states appear below 60 K. We conclude that the wafer-scale CVD-grown samples can be utilized without loss of generality in the integration of electronic/optoelectronic devices. |
| first_indexed | 2024-03-09T02:59:43Z |
| format | Article |
| id | doaj.art-21aff16e97294e0ea6c7e8ec536012cc |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-03-09T02:59:43Z |
| publishDate | 2023-11-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-21aff16e97294e0ea6c7e8ec536012cc2023-12-04T17:26:53ZengAIP Publishing LLCAPL Materials2166-532X2023-11-011111111124111124-810.1063/5.0175469Is chemical vapor deposition of monolayer WSe2 comparable to other synthetic routes?Soo Ho Choi0Sang-Hyeok Yang1Sehwan Park2Byeong Wook Cho3Tuan Dung Nguyen4Jung Ho Kim5Young-Min Kim6Ki Kang Kim7Young Hee Lee8Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of KoreaDepartment of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of KoreaCenter for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of KoreaCenter for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of KoreaCenter for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of KoreaDepartment of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United KingdomCenter for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of KoreaCenter for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of KoreaCenter for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of KoreaChemical vapor deposition (CVD) can produce wafer-scale transition-metal dichalcogenide (TMD) monolayers for the integration of electronic and optoelectronic devices. Nonetheless, the material quality of the CVD-grown TMDs still remains controversial. Here, we compare the quality of representative WSe2 monolayers grown by CVD compared to that obtained by other synthesis methods: bulk-grown-chemical vapor transport (CVT) and flux. Through the use of a deep-learning–based algorithm to analyze atomic-resolution scanning transmission electron microscopy images, we confirm that Se vacancies (VSe) are the primary defects in WSe2, with a defect density of ∼5.3 × 1013 cm−2 in the CVD-grown sample, within the same order of magnitude of other methods (∼3.9 × 1013 cm−2 from CVT-grown samples and ∼2.7 × 1013 cm−2 from flux-grown samples). The carrier concentration in field-effect transistors at room temperature is ∼5.84 × 1012 cm−2 from a CVD-grown sample, comparable to other methods (6–7 × 1012 cm−2). The field-effect mobility of the CVD-grown sample is slightly lower than that of other synthesis methods, together with similar trends in on-current. While the difference in photoluminescence intensity is not appreciable at room temperature, different intensities of defect-related localized states appear below 60 K. We conclude that the wafer-scale CVD-grown samples can be utilized without loss of generality in the integration of electronic/optoelectronic devices.http://dx.doi.org/10.1063/5.0175469 |
| spellingShingle | Soo Ho Choi Sang-Hyeok Yang Sehwan Park Byeong Wook Cho Tuan Dung Nguyen Jung Ho Kim Young-Min Kim Ki Kang Kim Young Hee Lee Is chemical vapor deposition of monolayer WSe2 comparable to other synthetic routes? APL Materials |
| title | Is chemical vapor deposition of monolayer WSe2 comparable to other synthetic routes? |
| title_full | Is chemical vapor deposition of monolayer WSe2 comparable to other synthetic routes? |
| title_fullStr | Is chemical vapor deposition of monolayer WSe2 comparable to other synthetic routes? |
| title_full_unstemmed | Is chemical vapor deposition of monolayer WSe2 comparable to other synthetic routes? |
| title_short | Is chemical vapor deposition of monolayer WSe2 comparable to other synthetic routes? |
| title_sort | is chemical vapor deposition of monolayer wse2 comparable to other synthetic routes |
| url | http://dx.doi.org/10.1063/5.0175469 |
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