Investigation of the Specification Degradation Mechanism of CMOS Power Amplifier under Thermal Shock Test

Investigation of the Specification Degradation Mechanism of CMOS Power Amplifier under Thermal Shock Test

To investigate the critical specifications of a power amplifier (PA) under rapidly changing temperature conditions, we fabricated and tested a 0.3–1.1 GHz complementary metal–oxide–semiconductor (CMOS) PA under thermal shock tests. The results show that high- and low-temperature shocks can accelerat...

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Bibliographic Details
Main Authors: Shaohua Zhou, Cheng Yang, Jian Wang
Format: Article
Language:English
Published: MDPI AG 2022-05-01
Series:Micromachines
Subjects:
PCB
FR-4
CMOS
power amplifier
performance degradation
thermal shock
Online Access:https://www.mdpi.com/2072-666X/13/6/815

Internet

https://www.mdpi.com/2072-666X/13/6/815

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