Preepitaxial substrate treatment of GaSb for liquid phase technology homoepitaxial growth
The results of investigation to find out the optimal conditions of preepitaxial GaSb substrate treatment by chemical etching in inorganic acid mixes are offered. It is shown that application of two-stage chemical treatment in HNO3:HF:H2O=3:1:2 and H2O2:HF:H2O=4:1:15 etchants give a possibility to sa...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2008-12-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2008/6_2008/pdf/08.zip |