Investigating the Shielding Effect of Pulse Transformer Operation in Isolated Gate Drivers for SiC MOSFETs

Investigating the Shielding Effect of Pulse Transformer Operation in Isolated Gate Drivers for SiC MOSFETs

Wide-bandgap technology evolution compels the advancement of efficient pulse-width gate-driver devices. Integrated enhanced gate-driver planar transformers are a source of electromagnetic disturbances due to inter-winding capacitances, which serve as a route to common-mode (CM) currents. This paper...

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Bibliographic Details
Main Authors: Loreine Makki, Marc Anthony Mannah, Christophe Batard, Nicolas Ginot, Julien Weckbrodt
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Energies
Subjects:
wide-bandgap
gate-driver
planar transformer
CM noise
ANSYS Q3D Extractor
SiC MOSFET
Online Access:https://www.mdpi.com/1996-1073/14/13/3866

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https://www.mdpi.com/1996-1073/14/13/3866

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