High Step-Up Flyback with Low-Overshoot Voltage Stress on Secondary GaN Rectifier
This paper presents a new technique to mitigate the high voltage stress on the secondary gallium nitride (GaN) transistor in a high step-up flyback application. GaN devices provide a means of achieving high efficiency at hundreds (and thousands) of kHz of switching frequency. Presently however, comm...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2022-07-01
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Series: | Energies |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1073/15/14/5092 |