High Step-Up Flyback with Low-Overshoot Voltage Stress on Secondary GaN Rectifier

This paper presents a new technique to mitigate the high voltage stress on the secondary gallium nitride (GaN) transistor in a high step-up flyback application. GaN devices provide a means of achieving high efficiency at hundreds (and thousands) of kHz of switching frequency. Presently however, comm...

Full description

Bibliographic Details
Main Authors: Radin Za’im, Jafferi Jamaludin, Yushaizad Yusof, Nasrudin Abd Rahim
Format: Article
Language:English
Published: MDPI AG 2022-07-01
Series:Energies
Subjects:
Online Access:https://www.mdpi.com/1996-1073/15/14/5092